NDLI: AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

Content Provider	IEEE Xplore Digital Library
Author	Tsurumi, N. Ueno, H. Murata, T. Ishida, H. Uemoto, Y. Ueda, T. Inoue, K. Tanaka, T.
Copyright Year	1963
Abstract	Reduction of thermal resistance in AlGaN/GaN heterojunction field-effect transistors (HFETs) is critical for further increase in their output power to be handled in these promising material systems. In this paper, we present a new technique to reduce it using polycrystalline AlN passivation deposited by dc sputtering as a surface heat spreader over AlGaN/GaN HFETs. The AlN is deposited by dc sputtering, and it is well oriented to the c-axis. The measured thermal resistances of AlGaN/GaN HFETs with AlN passivation are lower than those with SiN passivation, which well agree with the results of the thermal simulation. The most notable change of the characteristics by AlN passivation is that the drain current increases by 30%, and the on-state resistance is reduced by 66% by the passivation; moreover, the current collapse suppresses successfully. As a result, the radio frequency output power is higher than that with conventional SiN passivation and is increased by increasing the thickness of AlN passivation. Thus, reduction of the thermal resistance and higher output power by AlN passivation is experimentally achieved.
Sponsorship	IEEE Electron Devices Society
Starting Page	980
Ending Page	985
Page Count	6
File Size	761160
File Format	PDF
ISSN	00189383
Volume Number	57
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation Gallium nitride HEMTs MODFETs Aluminum gallium nitride Thermal resistance thermal spreading AlGaN/GaN HFETs current collapse polycrystalline AlNpassivation thermal resistance
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN_x Passivation

Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

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Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs

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