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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cheng-Han Wu Hsing-Hung Hsieh Chih-Wei Chien Chung-Chih Wu |
| Copyright Year | 2005 |
| Abstract | Self-aligned techniques are often used in conventional CMOS and Si-based thin-film transistors (TFTs) technologies due to various merits. In this paper, we report self-aligned coplanar top-gate InGaZnO TFTs using PECVD a-SiNinfin:H patterned to have low hydrogen content in the channel region and high hydrogen content in the source/drain region. After annealing to induce hydrogen diffusion from a-SiNinfin:H into the oxide semiconductor, the source-drain regions become more conductive and yet the channel region remains suitable for TFT operation, yielding a working self-aligned TFT structure. Such fabrication involves neither back-side exposure nor ion implantation, and thus may be compatible with the typical and cost-effective TFT manufacturing. |
| Sponsorship | IEEE Lasers and Electro-Optics Society Optical Society of America |
| Starting Page | 515 |
| Ending Page | 519 |
| Page Count | 5 |
| File Size | 749558 |
| File Format | |
| ISSN | 1551319X |
| Volume Number | 5 |
| Issue Number | 12 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-01 |
| Publisher Place | U.S.A. |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thin film transistors Hydrogen Displays CMOS technology Amorphous materials Manufacturing industries Backplanes Crystallization Gold Grain boundaries top-gate coplanar thin-film transistors (TFTs) Hydrogen incorporation InGaZnO self-align silicon nitride |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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