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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jung Gil Yang Kyounghoon Yang |
| Copyright Year | 2001 |
| Abstract | This letter describes the design and fabrication of a broadband InGaAs PIN traveling wave switch. A new thin-film microstrip line structure integrated with InGaAs PIN diodes has been used to enhance the switch performance at higher frequencies. The developed InGaAs PIN switch has an insertion loss of less than 3.2 dB and an isolation of greater than 40 dB in a broadband frequency range from 25 to 95 GHz. The BCB-based multi-layer technology effectively reduces the chip size of the fabricated SPDT MMIC switch to 1.05 times 0.58 mm2. To our knowledge, this is the first InGaAs PIN traveling-wave switch demonstrated up to 95 GHz. |
| Sponsorship | IEEE Microwave Theory and Techniques Society |
| Starting Page | 647 |
| Ending Page | 649 |
| Page Count | 3 |
| File Size | 222725 |
| File Format | |
| ISSN | 15311309 |
| Volume Number | 19 |
| Issue Number | 10 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-10-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Switches Indium gallium arsenide Transistors Microstrip MMICs Fabrication Insertion loss Radio frequency Dielectric thin films Radar traveling wave Benzocyclubutene (BCB) InGaAs PIN diode single-pole double-throw (SPDT) switch |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering |
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