NDLI: Novel Single-Wafer Single-Chamber Dry and Wet Hybrid System for Stripping and <emphasis emphasistype=italic>In Situ</emphasis> Cleaning of High-Dose Ion-Implanted Photoresists

Content Provider	IEEE Xplore Digital Library
Author	Hattori, T. Yi-Jung Kim Changro Yoon Jung-Keun Cho
Copyright Year	1988
Abstract	There is increasing demand for moving from batch immersion tools to single-wafer spin tools for silicon wafer cleaning, etching, and photoresist/residue removal in advanced semiconductor manufacturing. However, high-dose ion-implanted photoresist removal using a conventional single-wafer spin tool is very difficult. We have developed a novel single-wafer single-chamber dry and wet hybrid system in combination with dry ashing and moderate-temperature wet-cleaning treatments by implementing an atmospheric-pressure plasma unit into a conventional single-wafer spin cleaning tool. This compact single-wafer single-chamber system can completely remove the hardened photoresist due to high-dose ion-implantation by an atmospheric-pressure plasma ashing process followed by an in situ wet chemical process in the same single chamber within 2 min. This single-wafer single-chamber dry/wet hybrid system offers less than 1/3 smaller footprint, less than 1/4 shorter cycle time (for 50 wafer processing), and potentially better process control and less contamination risk, as well as lower equipment cost, compared to the conventional combination of two separate dry- and wet-processing systems.
Sponsorship	IEEE Electron Devices Society IEEE Components, Packaging, and Manufacturing Technology Society IEEE Reliability Society IEEE Solid-State Circuits Society
Starting Page	468
Ending Page	474
Page Count	7
File Size	2284573
File Format	PDF
ISSN	08946507
Volume Number	22
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resists Cleaning Atmospheric-pressure plasmas Silicon Etching Semiconductor device manufacture Chemical processes Process control Contamination Costs sulfuric acid–hydrogen peroxide mixture (SPM) Atmospheric-pressure plasma dry and wet hybrid system high-dose ion implantation photoresist removal single-wafer spin cleaning
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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