NDLI: Extraction of the Effective Mobility of <formula formulatype=inline><tex Notation=TeX>$ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$</tex></formula> <emphasis emphasistype=roman>MOSFETs</emphasis>

Content Provider	IEEE Xplore Digital Library
Author	Hinkle, C.L. Sonnet, A.M. Chapman, R.A. Vogel, E.M.
Copyright Year	1980
Abstract	The extraction of the effective mobility on In_0.53 Ga_0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm²/V middots. The removal of C _it response in the split C-V measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split C-V can be used to freeze out the D _it response to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be ldquowarmed uprdquo to room temperature and an accurate measure of Q _inv is achieved. These results confirm the fundamental performance advantages of In_0.53Ga_0.47As MOSFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	316
Ending Page	318
Page Count	3
File Size	378462
File Format	PDF
ISSN	07413106
Volume Number	30
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Capacitance measurement Current measurement Frequency dependence FETs Substrates Temperature Frequency measurement Length measurement Charge carrier density III–V metal–oxide–semiconductor field-effect transistor (MOSFET) Effective mobility InGaAs interface states split $C$–$V$
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ and InP Capacitors

Small-Signal Response of Inversion Layers in High-Mobility $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs Made With Thin High- $kappa$ Dielectrics

Silane and Ammonia Surface Passivation Technology for High-Mobility $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs

Effects of Plasma-$hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ nMOSFETs

Electrical Properties of $hbox{Ga}_{2}hbox{O}_{3}/ hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

Electron Mobility in Surface- and Buried-Channel Flatband $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs With ALD $hbox{Al}_{2}hbox{O}_{3}$ Gate Dielectric

A High-Frequency Transconductance Method for Characterization of High- $kappa$ Border Traps in III-V MOSFETs

A Degenerately Doped $hbox{In}_{0.53}hbox{Ga}_{0.47} hbox{As}$ Bipolar Junction Transistor

High-Performance Inverted $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

Extraction of the Effective Mobility of $ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs

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A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ and InP Capacitors

Small-Signal Response of Inversion Layers in High-Mobility $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs Made With Thin High- $kappa$ Dielectrics

Silane and Ammonia Surface Passivation Technology for High-Mobility $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs

Effects of Plasma-$hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ nMOSFETs

Electrical Properties of $hbox{Ga}_{2}hbox{O}_{3}/ hbox{GaAs}$ Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

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A High-Frequency Transconductance Method for Characterization of High- $kappa$ Border Traps in III-V MOSFETs

A Degenerately Doped $hbox{In}_{0.53}hbox{Ga}_{0.47} hbox{As}$ Bipolar Junction Transistor

High-Performance Inverted $hbox{In}_{0.53} hbox{Ga}_{0.47}hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

Extraction of the Effective Mobility of $ hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ MOSFETs