NDLI: High-Detectivity and High-Single-Photon-Detection-Efficiency 4H-SiC Avalanche Photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Xiaogang Bai Han-Din Liu McIntosh, D.C. Campbell, J.C.
Copyright Year	1965
Abstract	We report large-area, 250-mum-diameter, 4H-SiC avalanche photodiodes with low dark current and high gain. At room temperature, the dark current density is 59.5 nA/cm² at a gain of 1000. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of the recessed-window device at zero bias is estimated to be 6times10¹⁴ Omega. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1times10¹⁴ cmHz^1/2 W^-1, has been achieved. In Geiger mode operation, high single photon detection efficiency of 30% with dark count probability of 8times10^-4 is reported.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	300
Ending Page	303
Page Count	4
File Size	611794
File Format	PDF
ISSN	00189197
Volume Number	45
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Avalanche photodiodes Etching Dark current Silicon carbide Detectors Immune system Lithography Temperature Photodetectors Chemicals ultraviolet (UV) detector Avalanche photodiodes (APDs) photodetector silicon carbide
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency

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