NDLI: Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Poggi, A. Moscatelli, F. Solmi, S. Nipoti, R.
Copyright Year	1963
Abstract	A gate oxide obtained by wet oxidation of SiC preimplanted with nitrogen has been investigated on MOS capacitors and implemented in a n-channel MOSFET technology. Different implantation fluences and energies in the ranges 1.5 X 10¹³-1 X 10¹⁵ cm ^-2 and 2.5-10 keV, respectively, were used with the aims to study the effect of the nitrogen concentration at the SiO₂/SiC interface on MOSFET performance. The highest dose, which is able to amorphize a surface SiC layer, was also employed to take advantage of the faster oxidation rate of amorphous phase with respect to crystalline one. The electron interface trap density near the conduction band has been evaluated with different techniques both on MOS capacitors and MOSFET devices; a good agreement among the measured values has been attained. A strong reduction of the electron interface traps density located near the conduction band has been obtained in the samples with a high nitrogen concentration at the SiO₂/SiC interface. The MOSFETs with the highest nitrogen concentration at the interface (~1 X 10¹⁹ cm ^-3) present the highest channel mobility (21.9 cm²/V .s), the lowest threshold voltage (2.4 V), and the smallest subthreshold swing (310 mV/decade at drain current of 10 ^-11 A).
Sponsorship	IEEE Electron Devices Society
Starting Page	2021
Ending Page	2028
Page Count	8
File Size	855862
File Format	PDF
ISSN	00189383
Volume Number	55
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	4H-SiC Channel mobility interface states MOSFET nitrogen-implanted gate oxide threshold voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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