NDLI: A Mueller-Matrix Formalism for Modeling Polarization Azimuth and Ellipticity Angle in Semiconductor Optical Amplifiers in a Pump

Content Provider	IEEE Xplore Digital Library
Author	Guo, L.Q. Connelly, M.J.
Copyright Year	1983
Abstract	This paper presents a Mueller-matrix approach to simulate the azimuth and ellipticity trajectory of a probe light in a tensile-strained bulk semiconductor optical amplifier (SOA) in a conventional pump-probe scheme. The physical mechanisms for the variations of polarization azimuth and ellipticity angle of the probe originate from the significant nonuniform distributions of carrier density across the active region in the presence of an intense pump light. Due to this carrier-density nonuniformity, the effective refractive indexes experienced by transverse-electric (TE) and transverse-magnetic (TM) modes of the probe are different. This results in a phase shift between TE and TM modes of the probe upon leaving the SOA. Simulations of the carrier distributions along the cavity length at different pump-light levels are demonstrated using multisection rate equations, which take into account the longitudinal nonuniform carrier density. The optical gain is considered via the parabolic band approximation. The influences of the spontaneous recombination and carrier-dependent material loss on the amplifier performance are included. The Mueller-matrix formalism is utilized to predict the variations of azimuth and ellipticity angle, which greatly reduces the complexity of the simulations in comparison with Jones-matrix formalism. The suggested approach is beneficial to experimental investigations due to the fact that during the optical-tuning process, Stokes parameters are virtually measurable on the Poincareacute sphere, and the Stokes vector of the incoming probe can be adjusted by a polarization controller and monitored by a polarization analyzer. Based on these carrier-induced nonlinearities in SOAs, an optical and gate with extinction ratio larger than 14 dB and Q-factor larger than 25 is presented at a bit rate of 2.5 Gb/s
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	410
Ending Page	420
Page Count	11
File Size	449506
File Format	PDF
ISSN	07338724
Volume Number	25
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical polarization Azimuth Semiconductor optical amplifiers Probes Optical pumping Optical refraction Optical variables control Charge carrier density Tellurium Stimulated emission Stokes parameters ellipticity modeling Mueller matrix semiconductor optical amplifier (SOA)
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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A Mueller-Matrix Formalism for Modeling Polarization Azimuth and Ellipticity Angle in Semiconductor Optical Amplifiers in a Pump–Probe Scheme

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