NDLI: Emission Efficiency Dependence on the p-GaN Thickness in a High-Indium InGaN/GaN Quantum-Well Light-Emitting Diode

Content Provider	IEEE Xplore Digital Library
Author	Che-Hao Liao Chih-Yen Chen Horng-Shyang Chen Kuang-Yu Chen Wei-Lun Chung Wen-Ming Chang Jeng-Jie Huang Yu-Feng Yao Yean-Woei Kiang Chih-Chung Yang
Copyright Year	1989
Abstract	The dependencies of quantum-well (QW) internal quantum efficiency (IQE) and device behaviors on the p-layer thickness in a high-indium InGaN/GaN QW light-emitting diode (LED) are demonstrated. During the high-temperature growths of the p-AlGaN and p-GaN layers, the QWs are thermally annealed to increase their IQEs and blue-shift the emission with increasing p-layer thickness. Meanwhile, the quantum-confined Stark effect is enhanced with increasing p-layer thickness to decrease the IQEs and red-shift the emission. Based on the counteraction between the two effects, the maximum IQE and the shortest emission wavelength are observed in a sample with an optimized p-layer thickness, which includes a p-AlGaN layer of 20 nm and a p-GaN layer of 60 nm in thickness under our growth conditions. The fabricated LEDs of different p-GaN thicknesses show the similar variation trends in emission efficiency and wavelength.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1757
Ending Page	1759
Page Count	3
File Size	393717
File Format	PDF
ISSN	10411135
Volume Number	23
Issue Number	23
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Annealing Gallium nitride Temperature measurement Indium Fluctuations Stark effect thermal annealing Internal quantum efficiency (IQE) light-emitting diode (LED) p-GaN quantum-confined Stark effect
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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