NDLI: Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-<tex>$k$</tex>Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer

Content Provider	IEEE Xplore Digital Library
Author	Ta-Shan Chang Ting-Chang Chang Po-Tsun Liu Tien-Shan Chang Chun-Hao Tu Feng-Sheng Yeh
Copyright Year	1980
Abstract	A low-dielectric-constant (low-k)-material siloxane-based hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si : H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarization. In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiN_x)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm²/Vmiddots and a subthreshold swing of 0.68 V
Sponsorship	IEEE Electron Devices Society
Starting Page	902
Ending Page	904
Page Count	3
File Size	222939
File Format	PDF
ISSN	07413106
Volume Number	27
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Hydrogen Passivation Silicon compounds Apertures Planarization Brightness Liquid crystal displays Delay effects Electrodes thin-film transistor (TFT) Low-dielectric constant passivation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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