NDLI: Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Content Provider	IEEE Xplore Digital Library
Author	Liang Dong Ruifeng Yue Litian Liu
Copyright Year	1992
Abstract	In this paper, we report on the first realization and characterization of monolithic uncooled 8/spl times/8 infrared sensor arrays, based on amorphous silicon thin-film transistors (a-Si TFT). The a-Si TFT is employed as the active element of the sensor, because it possesses a high temperature coefficient of its drain current of 1.5%-6.5% K/sup -1/ at room temperature. The improved porous silicon micromachining techniques described here enable the integration of the a-Si TFT-based sensor array with the MOS readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of MOSFETs and sensors before being released. Optical tests are performed to characterize the sensor. The influences of the gate voltage of a-Si TFT (V/sub g/) and the voltage source of the circuitry (V/sub dd/) on the sensor performance are investigated. The measurement indicates that the sensor has a maximum detectivity of 8.67/spl times/10/sup 8/ cm Hz/sup 1/2/W/sup -1/ at V/sub g/=-15 V, V/sub dd/=-12 V and a chopping frequency of 30 Hz. The noise equivalent power (NEP) of the sensor is less than 10/sup -10/ W Hz/sup -1/2/, and the noise equivalent temperature difference (NETD) is as low as 67 mK at room temperature, which compares well with the recent results of some uncooled IR sensors developed by other groups. Primary imaging tests indicate that the 8/spl times/8 sensor array has potential for high performance imaging applications.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1167
Ending Page	1177
Page Count	11
File Size	1808039
File Format	PDF
ISSN	10577157
Volume Number	14
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensor arrays Fabrication Infrared sensors Thin film transistors Temperature sensors Sensor phenomena and characterization Silicon Circuits Optical sensors Voltage thermal imaging Infrared detection micromachining thin-film transistor (TFT)
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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