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Content Provider | IEEE Xplore Digital Library |
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Author | Lelarge, F. Rousseau, B. Dagens, B. Poingt, F. Pommereau, F. Accard, A. |
Copyright Year | 1989 |
Abstract | Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We investigated experimentally the relevant CW performances of as-cleaved InP-based QD lasers for telecom applications such as temperature properties (T/sub 0/=56 K), infinite length threshold current density (J/sub /spl infin///spl sim/150 A/cm/sup 2/ per QDs layer) and internal efficiency (0.37 W/A). Lasing in pulsed mode is observed for cavity length as short as 200 /spl mu/m with a threshold current of about 37 mA, demonstrating the high gain of the QD's active core. In addition, the Henry parameter of these InP-based QD lasers is experimentally determined using the Hakki-Paoli method (/spl alpha//sub H//spl sim/2.2). |
Sponsorship | IEEE Lasers and Electro-Optics Society |
Starting Page | 1369 |
Ending Page | 1371 |
Page Count | 3 |
File Size | 145344 |
File Format | |
ISSN | 10411135 |
Volume Number | 17 |
Issue Number | 7 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2005-07-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Quantum dot lasers Temperature Gas lasers Laser modes Threshold current Quantum dots Molecular beam epitaxial growth Indium phosphide Substrates Laser applications semiconducting III–V materials Gas source molecular beam epitaxy (GSMBE) InGaAsP–InP quantum-dot (QD) lasers |
Content Type | Text |
Resource Type | Article |
Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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