NDLI: VHF single crystal silicon capacitive elliptic bulk-mode disk resonators-part II: implementation and characterization

Content Provider	IEEE Xplore Digital Library
Author	Pourkamali, S. Zhili Hao Ayazi, F.
Copyright Year	1992
Abstract	This work, the second of two parts, reports on the implementation and characterization of high-quality factor (Q) side-supported single crystal silicon (SCS) disk resonators. The resonators are fabricated on SOI substrates using a HARPSS-based fabrication process and are 3 to 18 /spl mu/m thick. They consist of a single crystal silicon resonant disk structure and trench-refilled polysilicon drive and sense electrodes. The fabricated resonators have self-aligned, ultra-narrow capacitive gaps in the order of 100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and 26000 at atmospheric pressure are exhibited by 18 /spl mu/m thick SCS disk resonators of 30 /spl mu/m in diameter, operating in their elliptical bulk-mode at /spl sim/150 MHz. Motional resistance as low as 43.3 k/spl Omega/ was measured for an 18-/spl mu/m-thick resonator with 160 nm capacitive gaps at 149.3 MHz. The measured electrostatic frequency tuning of a 3-/spl mu/m-thick device with 120 nm capacitive gaps shows a tuning slope of -2.6 ppm/V. The temperature coefficient of frequency for this resonator is also measured to be -26 ppm//spl deg/C in the temperature range from 20 to 150/spl deg/C. The measurement results coincide with the electromechanical modeling presented in Part I.
Sponsorship	IEEE Electron Devices Society American Society of Mechanical Engineering (ASME)
Starting Page	1054
Ending Page	1062
Page Count	9
File Size	2411823
File Format	PDF
ISSN	10577157
Volume Number	13
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Electrostatic measurements Atmospheric measurements Electrical resistance measurement Frequency measurement Tuning Temperature distribution Fabrication Resonance Drives temperature coefficient HARPSS microresonator quality factor silicon-on-insulation (SOI)
Content Type	Text
Resource Type	Article
Subject	Mechanical Engineering Electrical and Electronic Engineering

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