NDLI: Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS

Content Provider	IEEE Xplore Digital Library
Author	Urata, R. Nathawad, L.Y. Takahashi, R. Kai Ma Miller, D.A.B. Wooley, B.A. Harris Jr., J.S.
Copyright Year	1983
Abstract	By linking the unique capabilities of photonic devices with the signal processing power of electronics, photonically sampled analog-to-digital (A/D) conversion systems have demonstrated the potential for superior performance over all-electrical A/D conversion systems. We adopt a photonic A/D conversion scheme using low-temperature (LT)-grown GaAs metal-semiconductor-metal (MSM) photoconductive switches integrated with Si-CMOS A/D converters. The large bandwidth of the LT GaAs switches and the low timing jitter and short width of mode-locked laser pulses are combined to accurately sample input frequencies up to several tens of gigahertz. CMOS A/D converters perform back-end digitization, and time-interleaving is used to increase the total sampling rate of the system. In this paper, we outline the development of this system, from optimization of the LT GaAs material, speed and responsivity measurements of the switches, bandwidth and linearity characterization of the first-stage optoelectronic sample-and-hold, to integration of the switches with CMOS chips. As a final proof-of-principle demonstration, a two-channel system was fabricated with LT GaAs MSM switches flip-chip bonded to CMOS A/D converters. When operated at an aggregate sampling rate of 160 megasamples/s, the prototype system exhibits /spl sim/3.5 effective number of bits (ENOB) of resolution for input signals up to 40 GHz.
Sponsorship	IEEE Lasers and Electro-Optics Society Optical Society of America
Starting Page	3104
Ending Page	3115
Page Count	12
File Size	611903
File Format	PDF
ISSN	07338724
Volume Number	21
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Switches Switching converters Bandwidth Sampling methods Joining processes Signal processing Photoconducting materials Timing jitter Laser mode locking
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics

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