NDLI: Minimization of the mechanical-stress-induced inaccuracy in bandgap voltage references

Content Provider	IEEE Xplore Digital Library
Author	Fruett, F. Meijer, G.C.M. Bakker, A.
Copyright Year	1966
Abstract	This paper shows a systematic approach to calculate and to minimize mechanical-stress-related problems in bandgap voltage references. Mechanical stress is the main cause of long-term drift and packaging-induced inaccuracy in bandgap voltage references. Especially, low-cost epoxy packaging can cause a large mechanical stress, being in the range from -200 to +200 MPa. This stress shows local variations over the chip area and changes over time or during thermal cycling. Due to the piezojunction effect, this stress causes changes and drift in the base-emitter voltages of bipolar transistors and consequently in the output voltage of bandgap references. In this paper, it is shown that, even when using low-cost IC and packaging technology, a bandgap reference with a high immunity for the effects of mechanical stress can be realized.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	1288
Ending Page	1291
Page Count	4
File Size	633337
File Format	PDF
ISSN	00189200
Volume Number	38
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Voltage Thermal stresses Bipolar transistors Tensile stress Temperature dependence Brazil Council Integrated circuit packaging Stability
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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