NDLI: A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

Content Provider	IEEE Xplore Digital Library
Author	Santocchia, A. MacEvoy, B. Hall, G. Bilei, G.M. Moscatelli, F. Passeri, D. Pignatel, G.U.
Copyright Year	1963
Abstract	The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10/spl deg/C). This, and more general current interest in the field of cryogenic operation, has led us to investigate the behavior of our model over a wide range of temperatures. We present charge collection spectra from 1064 nm laser pulses as a function of detector bias between temperatures of 115 K and 290 K, using devices irradiated with 23 GeV protons in the range 10/sup 13/-4/spl times/10/sup 14/ protons/spl middot/cm/sup -2/. These data allow a deeper investigation of the influence of defect capture cross sections on N/sub eff/. The model prediction for the reversion to n-type of heavily-irradiated detectors at low temperature is investigated and deviations from the model are explored.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1111
Ending Page	1120
Page Count	10
File Size	831062
File Format	PDF
ISSN	00189499
Volume Number	50
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cryogenics Large Hadron Collider Temperature distribution Predictive models Radiation detectors Silicon radiation detectors Doping Semiconductor process modeling Finite element methods Temperature control
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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