NDLI: Current transport modeling in quantum-barrier-enhanced heterodimensional contacts

Content Provider	IEEE Xplore Digital Library
Author	Tait, G.B. Nabet, B.
Copyright Year	1963
Abstract	A physical model for electron and hole current transport is formulated in a novel heterodimensional contact that incorporates a barrier-enhancement region between a two-dimensional optically active InGaAs/InAlAs quantum well and a three-dimensional metal contact. Developed for easy inclusion in fully self-consistent numerical device simulators, these quantum-mechanical-transmission boundary conditions are useful to investigate important carrier transport effects such as carrier accumulation and thermionic and tunneling emission in heterodimensional contacts, dc current simulations of the quantum-barrier-enhanced structure are compared with simulated currents in a structure with direct metal contact to the InGaAs quantum well. Results indicate a reduction in dark current of nearly three orders of magnitude, making these contact structures attractive for low-noise photodetector applications. Additionally, simulation of the transient current response of a photodetector with 1-/spl mu/m interdigitated contact spacing indicates an electrical bandwidth of 50 GHz.
Sponsorship	IEEE Electron Devices Society
Starting Page	2573
Ending Page	2578
Page Count	6
File Size	389861
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum wells Current Tunneling Schottky diodes Photodetectors Semiconductor device modeling Transient analysis Indium compounds Gallium materials/devices Aluminum materials/devices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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