NDLI: Hot-carrier stressing of NPN polysilicon emitter bipolar transistors incorporating fluorine

Content Provider	IEEE Xplore Digital Library
Author	Sheng, S.R. McKinnon, W.R. McAlister, S.P. Storey, C. Hamel, J.S. Ashburn, P.
Copyright Year	1963
Abstract	The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon-emitter NPN bipolar transistors have been examined. Forward Gummel plots, base-emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluorinated devices retaining the initial improvement observed in the forward-bias base current, which is due to suppression of recombination in the BE junction depletion regions at the oxide/silicon interface. The benefits of fluorination, and particularly the reduction in base current in fluorinated devices, appear to be robust - that is, there is no evidence that the defects passivated by fluorine are reactivated during stressing, or that fluorination introduces additional defects that are activated under stressing.
Sponsorship	IEEE Electron Devices Society
Starting Page	1141
Ending Page	1144
Page Count	4
File Size	370371
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Fluorine Bipolar transistors Hot carriers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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