NDLI: A low-cost uncooled infrared microbolometer detector in standard CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Tezcan, D.S. Eminoglu, S. Akin, T.
Copyright Year	1963
Abstract	This paper reports the development of a low-cost uncooled infrared microbolometer detector using a commercial 0.8 /spl mu/m CMOS process, where the CMOS n-well layer is used as the infrared sensitive material. The n-well is suspended by front-end bulk-micromachining of the fabricated CMOS dies using electrochemical etch-stop technique in TMAH. Since this approach does not require any lithography or infrared sensitive material deposition after CMOS fabrication, the detector cost is almost equal to the CMOS chip cost. The n-well has a TCR of 0.5-0.7%/K, relatively low compared to state-of-the-art microbolometer materials; however, it has negligible 1/f noise due to its single crystal structure. The use of polysilicon interconnects on the support arms instead of metal reduces the overall pixel TCR to 0.34%/K, but provides a better performance due to improved thermal isolation. Based on this pixel, a 16 /spl times/ 16 prototype focal plane array (FPA) with 80 /spl mu/m /spl times/ 80 /spl mu/m pixel size and 13% fill factor has been implemented, where built-in diodes are used to simplify array scanning, at the expense of reduced overall pixel TCR of 0.24%/K. The n-well microbolometer array with a simple readout scheme provides a responsivity of 2000 V/W, a detectivity of 2.6 /spl times/ 10/sup 8/ cmHz/sup 1/2//W, and an estimated NETD of 200 mK at 0.5 Hz frame rate. Considering that this performance can be further improved with low noise readout circuits, the CMOS n-well microbolometer is a cost-effective approach to implement very low-cost uncooled infrared detector arrays with reasonable performance.
Sponsorship	IEEE Electron Devices Society
Starting Page	494
Ending Page	502
Page Count	9
File Size	1252361
File Format	PDF
ISSN	00189383
Volume Number	50
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Infrared detectors Micromachining Integrated circuit fabrication Silicon Bolometers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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