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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ming-Dou Ker Kuo-Chun Hsu |
| Copyright Year | 1963 |
| Abstract | The turn-on mechanism of a silicon-controlled rectifier (SCR) device is essentially a current triggering event. While a current is applied to the base or substrate of the SCR device, it can be quickly triggered into its latching state. In this paper, a novel design concept to turn on the SCR device by applying the substrate-triggered technique is first proposed for effective on-chip electrostatic discharge (ESD) protection. This novel substrate-triggered SCR device has the advantages of controllable switching voltage and adjustable holding voltage and is compatible with general CMOS processes without extra process modification such as the silicide-blocking mask and ESD implantation. Moreover, the substrate-triggered SCR devices can be stacked in ESD protection circuits to avoid the transient-induced latch-up issue. The turn-on time of the proposed substrate-triggered SCR devices can be reduced from 27.4 to 7.8 ns by the substrate-triggering technique. The substrate-triggered SCR device with a small active area of only 20 /spl mu/m /spl times/ 20 /spl mu/m can sustain the HBM ESD stress of 6.5 kV in a fully silicided 0.25-/spl mu/m CMOS process. |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 397 |
| Ending Page | 405 |
| Page Count | 9 |
| File Size | 622430 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 50 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-02-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thyristors Electrostatic discharges Protection Integrated circuit reliability CMOS integrated circuits |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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