NDLI: The Effects of Junction Shape and Surface Recombination on Transistor Current Gain-Part II

Content Provider	IEEE Xplore Digital Library
Author	Stripp, K.F. Moore, A.R.
Copyright Year	1931
Abstract	Previous work demonstrated the importance of surface recombination and junction shape on the transistor current amplification factor ¿ by means of a two-dimensional conducting paper analog. This is now extended theoretically and experimentally to other cases which are also of practical importance. Exact analytical solutions have been obtained for the collector-to-base current amplification factor, ¿cb, for plane-parallel (grown junction) transistors of rectangular and round cross section including surface and volume recombination. For the case in which the surface recombination velocity s is small and the volume lifetime ¿ is large, these equations reduce to s T a0cb (_ j_ f+ L) VK Ir) where K and T are geometrical constants simply related to the base width W and the cross-sectional area. The range of validity of this equation has been investigated. For the more complex geometries usually found in alloy transistors, ¿cb is found to be of the form: = Lc - L)-1 ± F(T, S)] (K T)[] where K and T are again geometrical constants. F(¿, s) is a small positive correction term which goes to zero as s approaches zero and ¿ approaches infinity. Although the constants K and T are not readily evaluated analytically, in most practical cases volume recombination can be neglected, and then By means of a three-dimensional electrolytic conductance analog, K and f(s) have been evaluated for various geometries typical of alloy junction transistors.
Starting Page	856
Ending Page	866
Page Count	11
File Size	2864829
File Format	PDF
ISSN	00968390
Volume Number	43
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1955-07-01
Access Restriction	Subscribed
Rights Holder	The Institute of Radio Engineers, Inc. (IRE)
Subject Keyword	Radiative recombination Geometry Shape memory alloys Equations H infinity control Laboratories Semiconductor devices Steady-state Surface treatment Current measurement
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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The Effect of Junction Shape and Surface Recombination on Transistor Current Gain

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