NDLI: Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes

Content Provider	IEEE Xplore Digital Library
Author	Auer, U. Prost, W. Agethen, M. Tegude, F.-J. Duschl, R. Eberl, K.
Copyright Year	1980
Abstract	Si/SiGe interband tunnelling diodes have been grown by MBE on high resistivity (n/sup -/) silicon substrates. The device enables a very low voltage, high-speed logic on a silicon substrate. A novel self-aligned diode is processed using optical lithography and dopant-selective wet chemical etching. A maximum speed index for a 60 /spl mu/m/sup 2/ anode area device is evaluated to 2.2 ns/V resulting in a switching speed of 0.5 ns. A logic latch built of two series connected diodes (MOBILE principle) is demonstrated, showing very robust logic operation at a supply voltage as low as 0.3 V. The used technology may be employed for a co-integration with both SiGe heterostructure bipolar- and field-effect transistor technology and may contribute to future low-voltage high speed logic on Si substrates.
Sponsorship	IEEE Electron Devices Society
Starting Page	215
Ending Page	217
Page Count	3
File Size	209208
File Format	PDF
ISSN	07413106
Volume Number	22
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Logic devices Diodes Low voltage Tunneling Conductivity High speed optical techniques Lithography Chemical processes
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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