NDLI: Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

Content Provider	IEEE Xplore Digital Library
Author	Buttari, D. Chini, A. Meneghesso, G. Zanoni, E. Sawdai, D. Pavlidis, D. Hsu, S.S.H.
Copyright Year	1980
Abstract	The hole multiplication factor in pnp InAlAs/InGaAs single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient /spl beta//sub p/ has been estimated taking into account the Early effect, I/sub CBO/, and thermal effects. Numerical corrections for dead space were made. The importance of considering second order effects is highlighted, showing that rough approximations can lead to an overestimation of the coefficient /spl beta//sub p/. At low electric fields, the extracted coefficient agrees with the most recent photomultiplication measurements available in the literature. At high electric fields, hole impact ionization coefficient is estimated up to values previously not reported in the literature (/spl beta//sub p//spl ap/10/sup 4/ cm/sup -1/).
Sponsorship	IEEE Electron Devices Society
Starting Page	197
Ending Page	199
Page Count	3
File Size	76614
File Format	PDF
ISSN	07413106
Volume Number	22
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Impact ionization Indium compounds Heterojunction bipolar transistors Electric variables measurement Voltage Charge carrier processes Performance evaluation Bipolar transistors Solid state circuits
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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