NDLI: A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots

Content Provider	IEEE Xplore Digital Library
Author	Kastalsky, A. Vorobjev, L.E. Firsov, A. Zerova, V.L. Towe, E.
Copyright Year	1965
Abstract	A new type of semiconductor injection laser capable of simultaneously generating radiation in the mid-infrared (MIR) (/spl lambda//spl sim/10 /spl mu/m) and near-infrared (NIR) (/spl lambda//spl sim/0.9 /spl mu/m) spectral regions is proposed. The MIR emission is a result of intersubband (intraband) electron transitions within a three-level conduction band in a quantum well or a quantum dot. The NIR emission, on the other hand, is due to conventional interband recombination of injected electrons and holes into the conduction and valence bands, respectively. The conditions for population inversion in the intersubband emission process are determined by an appropriately engineered energy structure for a three-level system in the conduction band of a quantum well or dot structure: for the quantum-well-based system, the structure has an asymmetric funnel shape to provide long electron-phonon lifetime at the third (top) energy level. Under high carrier injection, NIR interband emission depopulates the conduction ground level of the quantum well, thereby stabilizing the electron concentration at this level-a necessary condition fur the operation of the MIR laser. This paper discusses the calculation of the population inversion conditions, the requisite gain, and threshold current for MIR laser operation. We also present a preliminary design of the laser structure with a composite waveguide that accommodates both mid- and NIR stimulated emission.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	1356
Ending Page	1362
Page Count	7
File Size	140860
File Format	PDF
ISSN	00189197
Volume Number	37
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well lasers Quantum dot lasers Electron emission Waveguide lasers Laser transitions Semiconductor lasers Radiative recombination Spontaneous emission Charge carrier processes Power engineering and energy
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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