NDLI: Charge neutrality violation in quantum-dot lasers

Content Provider	IEEE Xplore Digital Library
Author	Asryan, L.V. Suris, R.A.
Copyright Year	1995
Abstract	Theory of quantum-dot (QD) lasers is augmented to include, in a self-consistent manner, the QD-layer charge. The electron- and hole-level occupancies in QDs are obtained through the solution of the problem for the electrostatic-field distribution across the junction. They are shown to differ from each other. As a result, the local neutrality is broken down in each QD, i.e., the QD layer is charged. The key dimensionless parameters controlling the difference of the hole- and electron-level occupancies are revealed. The detailed analysis of the gain and spontaneous radiative recombination current density is given, having regard to the fact of violation of the charge neutrality in QDs. The gain-current density dependence is calculated, The voltage dependences of the electron- and hole-level occupancies, gain, and current density are obtained. Particular emphasis is given to the transparency and lasing threshold characteristics. Optimization of the QD-laser structure is carried out. The optimum surface density of QDs, minimizing the threshold current density, is shown to be distinctly higher than that calculated without regard for the lack of the charge neutrality in QDs.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	148
Ending Page	157
Page Count	10
File Size	485243
File Format	PDF
ISSN	1077260X
Volume Number	3
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dot lasers Threshold current Semiconductor lasers Laser theory Current density Quantum well lasers Capacitance Charge carrier processes Quantum dots Radiative recombination
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Heavily-doped semiconductor lasers

Carrier Escape and the Ideality Factor in Quantum Dot p-n Junctions

Quantum dot photonic devices for lightwave communications

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers

Charge neutrality violation in quantum-dot lasers

Similar Documents

Carrier lifetime and recombination in long-wavelength quantum-well lasers

Reduced surface sidewall recombination and diffusion in quantum-dot lasers

Heavily-doped semiconductor lasers

Carrier Escape and the Ideality Factor in Quantum Dot p-n Junctions

Quantum dot photonic devices for lightwave communications

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

Temperature-Dependent Threshold Current in InP Quantum-Dot Lasers

Threshold Temperature Dependence of a Quantum-Dot Laser Diode With and Without p-Doping

A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-/spl mu/m GaInNAs-based quantum-well lasers

Charge neutrality violation in quantum-dot lasers