NDLI: Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects

Content Provider	IEEE Xplore Digital Library
Author	Flory, C.A. Hasnain, G.
Copyright Year	1965
Abstract	Modeling of nitride-based LEDs and laser diodes requires a fast modular tool for numerical simulation and analysis. It is required that the modeling tool reflects the primary physical processes of current injection, quantum well (QW) bound-state dynamics, QW capture, radiative, and nonradiative transitions. The model must also have the flexibility to incorporate secondary physical effects, such as induced piezoelectric strain fields due to lattice mismatch and spontaneous polarization fields. A 1-D model with a phenomenological well-capture process, similar to that developed by Tessler and Eisenstein, has been implemented. The radiative processes are calculated from first principles, and the material band structures are computed using k/spl middot/p theory. The model also features the incorporation of such effects as thermionic emission at heterojunctions. Shockley-Read-Hall recombination, piezoelectric strain fields, and self-consistent calculation of the QW bound states with dynamic device operation. The set of equations underlying the model is presented, with particular emphasis on the approximations used to achieve the previously stated goals. A sample structure is analyzed, and representative physical parameters are plotted. The model is then used to analyze the effects of incorporation of the strain-induced piezoelectric fields generated by lattice mismatch and the spontaneous polarization fields. It is shown that these built-in fields can accurately account for the blue-shift phenomena observed in a number of different GaN LEDs.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	244
Ending Page	253
Page Count	10
File Size	191082
File Format	PDF
ISSN	00189197
Volume Number	37
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Optoelectronic devices Light emitting diodes Capacitive sensors Lattices Piezoelectric polarization Diode lasers Numerical simulation Thermionic emission Heterojunctions
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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