NDLI: Proton radiation response mechanisms in bipolar analog circuits

Content Provider	IEEE Xplore Digital Library
Author	Barnaby, H.J. Schrimpf, R.D. Sternberg, A.L. Berthe, V. Cirba, C.R. Pease, R.L.
Copyright Year	1963
Abstract	The experimental data presented in this paper indicate that the doping and geometry of critical transistors are the primary factors that affect the proton responses of the LM124 and LM148 operational amplifiers. The data also reveal that the electrical responses of these circuits and their input transistors to the combined effects of displacement damage and defects introduced by ionizing radiation are nonlinear. Analysis, supported by device simulation, shows that shifts in device parameters (surface potentials, carrier concentrations, etc.) caused by the buildup of oxide and interfacial defects affect the recombination rate due to traps resulting from displacement damage in the bulk silicon. This nonlinearity complicates the analysis of proton radiation effects and can have a significant impact on the qualification of analog parts for use in space environments.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2074
Ending Page	2080
Page Count	7
File Size	162413
File Format	PDF
ISSN	00189499
Volume Number	48
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Analog circuits Doping Geometry Operational amplifiers Ionizing radiation Analytical models Circuit simulation Silicon Proton radiation effects Qualifications
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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