NDLI: Spectral properties of proton irradiated gallium nitride blue diodes

Content Provider	IEEE Xplore Digital Library
Author	Gaudreau, F. Carlone, C. Houdayer, A. Khanna, S.M.
Copyright Year	1963
Abstract	The permanent damage induced by 2 MeV proton irradiation at room temperature is reported for gallium nitride based blue emitting diodes (CREE model C430-DH85). Both optical and electrical device characteristics were measured. The I-V dependence was obtained as a function of temperature. At low voltages, the current is proportional to the exponential of the voltage at a constant temperature and the slope of the I-V curve is independent of temperature for the range 75-350 K, confirming the tunneling mechanism of the carrier injection. The room-temperature curve was studied as a function of 2-MeV proton irradiation in the fluence range 10/sup 11/ to 10/sup 15/ cm/sup -2/. It is hardly affected up to a fluence of 3/spl times/10/sup 12/ cm/sup -2/. Higher fluences do not affect the tunneling mechanism, but proton irradiation affects the saturation value of the current. The integrated electroluminescence versus voltage curves were obtained as a function of fluence, but the results were not amenable to a degradation constant interpretation. To gain insight into the degradation mechanism, the electroluminescence was analyzed spectrally and found to be the sum of the band-to-band transition in blue color at /spl ap/430 nm and a parasitic yellow band. The contribution of each transition was determined. The ratio of the contributions depends on driving current, temperature, and fluence. Treated individually, both the band-to-band and the yellow transition are related to fluence. The 2-MeV proton radiation damage constant is (7/spl plusmn/1)/spl times/10/sup -14/ cm/sup -2/ for the band-to-band and (2.0/spl plusmn/0.4)/spl times/10/sup -14/ cm/sup -2/ for the yellow transitions. The degradation of space charge recombination and diffusion of minority carriers cause the degradation of the electroluminescence. GaN light-emitting diodes (LEDs) are about two orders of magnitude more resistant to 2-MeV proton irradiation than GaAs LEDs.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	1778
Ending Page	1784
Page Count	7
File Size	161648
File Format	PDF
ISSN	00189499
Volume Number	48
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Protons III-V semiconductor materials Gallium nitride Degradation Electroluminescence Light emitting diodes Optical devices Temperature dependence Voltage Temperature distribution
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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