NDLI: Precision electrical trimming of very low TCR poly-SiGe resistors

Content Provider	IEEE Xplore Digital Library
Author	Babcock, J.A. Francis, P. Bashir, R. Kabir, A.E. Schroder, D.K. Lee, M.S.L. Dhayagude, T. Yindeepol, W. Prasad, S.J. Kalnitsky, A. Thomas, M.E. Haggag, H. Egan, K. Bergemont, A. Jansen, P.
Copyright Year	1980
Abstract	Precision electrical trimming of stacked Si/SiGe polycrystalline resistors available from the extrinsic base structure of a SiGe BiCMOS technology has been demonstrated for the first time. It is shown that pulse current trimming techniques can be used to trim the poly-SiGe resistors by up to 50% from their original values with accuracy better than /spl plusmn/0.5%. The temperature coefficient of resistance (TCR) is shown to be linearly proportional to the percent change in electrically trimmed poly-SiGe resistance. Finally, we demonstrate resistance cycling using an electrical trim/recovery sequence, indicating that the technique is reversible and is governed by dopant segregation/diffusion mechanisms. The results are consistent with those obtained on conventional polysilicon resistors suggesting that the introduction of a strained SiGe layer does not adversely affect the electrical trim properties of these resistors.
Sponsorship	IEEE Electron Devices Society
Starting Page	283
Ending Page	285
Page Count	3
File Size	57311
File Format	PDF
ISSN	07413106
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistors Silicon germanium Germanium silicon alloys Electric resistance BiCMOS integrated circuits DH-HEMTs Temperature Solid state circuits Semiconductor thin films Tunable circuits and devices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Precision Electrical Trimming of Very Low TCR Poly-SiGe Resistors

Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI

SiGe BiCMOS technology for RF circuit applications

7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator

Integration of SiGe NPN devices with tunable collector profiles using a single mask

A Tunable Active MMIC Time Delay for Communication Systems in SiGe BiCMOS Technology

SiGe BiCMOS wide-band and tunable bandpass LNAs for adaptive multifunctional phased arrays

SiGe BiCMOS wide-band and tunable bandpass LNAs for adaptive multi-functional phased arrays

Frequency Multiplier Design Based on Multiple-Peak R-BJT-NDR Devices Fabricated by SiGe Technology

Precision electrical trimming of very low TCR poly-SiGe resistors

Similar Documents

Precision Electrical Trimming of Very Low TCR Poly-SiGe Resistors

Base-collector junction charge investigation of Si/SiGe HBT on thin film SOI

SiGe BiCMOS technology for RF circuit applications

7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator

Integration of SiGe NPN devices with tunable collector profiles using a single mask

A Tunable Active MMIC Time Delay for Communication Systems in SiGe BiCMOS Technology

SiGe BiCMOS wide-band and tunable bandpass LNAs for adaptive multifunctional phased arrays

SiGe BiCMOS wide-band and tunable bandpass LNAs for adaptive multi-functional phased arrays

Frequency Multiplier Design Based on Multiple-Peak R-BJT-NDR Devices Fabricated by SiGe Technology

Precision electrical trimming of very low TCR poly-SiGe resistors