NDLI: The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Green, B.M. Chu, K.K. Chumbes, E.M. Smart, J.A. Shealy, J.R. Eastman, L.F.
Copyright Year	1980
Abstract	Surface passivation of undoped AlGaN/CaN HEMT's reduces or eliminates the surface effects responsible for limiting both the RF current and breakdown voltages of the devices. Power measurements on a 2/spl times/125/spl times/0.5 /spl mu/m AlGaN/GaN sapphire based HEMT demonstrate an increase in 4 GHz saturated output power from 1.0 W/mm [36% peak power-added efficiency (PAE)] to 2.0 W/mm (46% peak PAE) with 15 V applied to the drain in each case. Breakdown measurement data show a 25% average increase in breakdown voltage for 0.5 /spl mu/m gate length HEMT's on the same wafer. Finally, 4 GHz power sweep data for a 2/spl times/75/spl times/0.4 /spl mu/m AlGaN/GaN HEMT on sapphire processed using the Si/sub 3/N/sub 4/ passivation layer produced 4.0 W/mm saturated output power at 41% PAE (25 V drain bias). This result represents the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's.
Sponsorship	IEEE Electron Devices Society
Starting Page	268
Ending Page	270
Page Count	3
File Size	71139
File Format	PDF
ISSN	07413106
Volume Number	21
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation HEMTs Aluminum gallium nitride Gallium nitride Power generation Microwave devices Radio frequency Power measurement Breakdown voltage Length measurement
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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