NDLI: Microstrip X-ray detector with a very high dynamic range based on LPE-GaAs

Content Provider	IEEE Xplore Digital Library
Author	Kaluza, A. Ohms, T. Rente, C. Engels, R. Reinartz, R. Luth, H.
Copyright Year	1963
Abstract	We report on the fabrication and characterization of a microstrip X-ray detector with a very high dynamic range based on GaAs diodes. The detector material was grown by liquid phase epitaxy (LPE) and showed a typical n-type background doping of 2/spl times/10/sup 13/ cm/sup -3/. The thickness of the epitaxial layer was between 75 and 200 /spl mu/m. At 27 V bias the thickness of the active layer was 45 /spl mu/m. The detector consists of 48 strips with a pitch of 50 /spl mu/m and a strip length of 3 mm. No cross talk between the diodes was observed, Measurements using a micro focus X-ray tube showed a mean quantum efficiency of the detector for the energy range between 35 and 100 keV of 9.5%. The maximum contrast was a factor of 400 between the signal in areas that were not shaded with lead and areas that were shaded with 5 mm lead. The maximum counting rate without amplifier saturation was 4.5/spl times/10/sup 5/ per second, which gives a dynamic range of 4.5/spl times/10/sup 5/ above 25 keV. The high dynamic range of this kind of X-ray detectors makes them very interesting for non destructive material testing.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	724
Ending Page	727
Page Count	4
File Size	374521
File Format	PDF
ISSN	00189499
Volume Number	45
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microstrip X-ray detectors Dynamic range Diodes Strips Fabrication Gallium arsenide Phase detection Epitaxial growth Doping
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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