NDLI: A fluxless bonding technology using indium-silver multilayer composites

Content Provider	IEEE Xplore Digital Library
Author	Chen, Y.-C. So, W.W. Lee, C.C.
Copyright Year	1994
Abstract	A fluxless bonding process has been developed using indium-silver multilayer composites deposited on silicon and GaAs wafers in one high vacuum cycle to inhibit the oxidation of the bonding media. The in situ formation of AgIn/sub 2/ intermetallic outer layer protects the inner media from oxidation when exposed to atmosphere. The bonding process is performed at 180/spl deg/C temperature in inert environment to prevent oxygen from getting into the specimens. High quality joints are produced as confirmed by a scanning acoustic microscope. The joints are very uniform with a thickness of 4 /spl mu/m. Scanning electron microscopy (SEM) evaluations reveal that the joint is composed of indium matrix with embedded intermetallic grains. Neither flux nor scrubbing motion is used in the bonding process. The process should be valuable in manufacturing applications where the use of flux cannot be tolerated.
Sponsorship	Ericsson IEEE Components, Packaging and Manufacturing Technology Society
Starting Page	46
Ending Page	51
Page Count	6
File Size	110901
File Format	PDF
ISSN	10709886
Volume Number	20
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-03-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Nonhomogeneous media Bonding processes Scanning electron microscopy Wafer bonding Oxidation Intermetallic Silicon Gallium arsenide Protection Atmosphere
Content Type	Text
Resource Type	Article
Subject	Engineering

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