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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lin, C.T. Su, Y.K. Chang, S.J. Huang, H.T. Chang, S.M. Sun, T.P. |
| Copyright Year | 1989 |
| Abstract | Experimental results are presented for noise voltage, responsivity, and specific detectivity (D*) for the long wavelength infrared (IR) HgCdTe photoconductive detectors. Hg/sub 0.8/Cd/sub 0.2/Te photoconductive detectors passivated with ZnS/photo-enhanced native oxide have an improved noise spectral density and D* than the detectors passivated with only ZnS. The low frequency 1/f noise charges were measured for a Hg/sub 0.8/Cd/sub 0.2/Te photo detector, as a function of bias at 77 K, and the effective surface trap density determined from the 1/f noise charges measured at 1 Hz. It was found that the surface effective trap densities of stacked passivated sample and the sample passivated only with ZnS are close to 4/spl times/10/sup 17/ and 9/spl times/10/sup 17/ cm/sup -2/ eV/sup -1/ under 0.4 V bias and 1 /spl mu/s integration time, respectively. We found that the numerical values of noise are strongly dependent upon surface passivation properties. It can be seen clearly that an HgCdTe photo detector with a stacked ZnS/photo-enhanced native oxide passivation is better than the HgCdTe photo detector passivated with a single ZnS layer. |
| Sponsorship | IEEE Lasers and Electro-Optics Society |
| Starting Page | 232 |
| Ending Page | 234 |
| Page Count | 3 |
| File Size | 85188 |
| File Format | |
| ISSN | 10411135 |
| Volume Number | 9 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-02-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Passivation Photoconductivity Zinc compounds Infrared detectors Low-frequency noise Mercury (metals) Tellurium Density measurement Current measurement Frequency measurement |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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