NDLI: Influence of photon reabsorption on the transfer efficiency of output intensity in semiconductor microcavities

Content Provider	IEEE Xplore Digital Library
Author	Nishikawa, T. Yokota, M. Nakamura, S. Kadoya, Y. Yamanishi, M. Ogura, I.
Copyright Year	1989
Abstract	Photon reabsorption effect on the transfer efficiency /spl beta//sub t/ of half-wavelength semiconductor microcavities was investigated by examining the excitation intensity dependence of the output light intensity. It is shown that /spl beta//sub t/ increases under intense excitation, and approaches to over-all spontaneous emission coupling coefficient /spl beta//sub 0/, as a result of the elimination of photon reabsorption. The results clearly demonstrate that the photon reabsorption is the predominant mechanism of the suppression of /spl beta//sub t/ at weak excitation, especially in the case of half-wavelength high-Q cavities.
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	179
Ending Page	181
Page Count	3
File Size	60619
File Format	PDF
ISSN	10411135
Volume Number	9
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microcavities Light emitting diodes Spontaneous emission Mirrors Quantum well lasers Optical coupling Diode lasers Solids Recycling Multidimensional systems
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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