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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Heshami, M. Wooley, B.A. |
| Copyright Year | 1966 |
| Abstract | A synchronous dual-port memory employing a three-transistor (3T) dynamic cell has been designed for use as a high throughput embedded data buffer in digital switching and signal processing applications. Skewed-clock pipelining is used to achieve operation at frequencies as high as 250 MHz with a low register element count. The 3T cell provides separate read and write access ports while occupying less than half the area of a conventional dual-port SRAM cell. On-chip Hamming error correction coding (ECC) is used to enhance the fault tolerance of the memory, A 25-kb experimental prototype has been integrated in a 0.8-/spl mu/m CMOS technology; it occupies a die area of 3800 /spl mu/m/spl times/1600 /spl mu/m and dissipates 420 mW while operating at 250 MHz. |
| Sponsorship | IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE |
| Starting Page | 376 |
| Ending Page | 383 |
| Page Count | 8 |
| File Size | 1230728 |
| File Format | |
| ISSN | 00189200 |
| Volume Number | 31 |
| Issue Number | 3 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-03-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Computer buffers Error correction codes CMOS technology Signal design Throughput Digital signal processing Pipeline processing Frequency Registers Random access memory |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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