NDLI: Study on hydrogenation of polysilicon thin film transistors by ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Min Cao Tiemin Zhao Saraswat, K.C. Plummer, J.D.
Copyright Year	1963
Abstract	Hydrogenation of polysilicon (poly-Si) thin film transistors (TFT's) by ion implantation has been systematically studied. Poly-Si TFT performance was dramatically improved by hydrogen ion implantation followed by a forming gas anneal (FGA). The threshold voltage, channel mobility, subthreshold swing, leakage current, and ON/OFF current ratio have been studied as functions of ion implantation dose and FGA temperature. Under the optimized conditions (H/sup +/ dose of 5/spl times/10/sup 15/ cm/sup -2/ and FGA temperature at 375/spl deg/C), NMOS poly-Si TFT's fabricated by a low temperature 600/spl deg/C process have a mobility of /spl sim/27 cm /sup 2//V/spl middot/s, a threshold voltage of /spl sim/2 V, a subthreshold swing of /spl sim/0.9 V/decade, and an OFF-state leakage current of /spl sim/7 pA//spl mu/m at V/sub DS/=10 V. The avalanche induced kink effect was found to be reduced after hydrogenation.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1134
Ending Page	1140
Page Count	7
File Size	671514
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Ion implantation Hydrogen Implants Plasma temperature Plasma immersion ion implantation Plasma materials processing Annealing Threshold voltage Leakage current
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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