NDLI: Development of an integrated high speed silicon PIN photodiode sensor

Content Provider	IEEE Xplore Digital Library
Author	Kyomasu, M.
Copyright Year	1963
Abstract	A silicon integrated PIN photodiode sensor, combined with a bipolar IC on same substrate (that is, a PIN photo integrated circuit sensor: PIN-PICS), was developed by employing a high resistive P/sup --/ epitaxial layer on a P/sup +/ substrate for creating a high speed and high optical responsivity PIN photodiode. We fabricated this device based on two special techniques: (1) the PIN photodiode is formed on a P/sup --//P/sup +/ substrate structure and isolated from bipolar components by the combination of a P/sup -/-well and a trench isolation, and (2) bipolar components are formed by the doubly diffused buried layer of the P/sup -/-well and the N/sup +/ collector wall. All of these components, such as npn and pnp transistors, were arranged within the lightly doped P/sup -/-well regions. From several kinds of trial samples, the following results were obtained. The PIN photodiode with 0.145 mm/sup 2/ active area indicated 680 MHz for cutoff frequency at 10 V bias with 830 mn radiation. In the case of 20 V bias, this value exceeded 1.5 GHz. This PIN-PICS was applied to a 10 Mbit/s burst mode compatible optical monolithic receiver and a transimpedance amplifier, and it has shown the expected results.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1093
Ending Page	1099
Page Count	7
File Size	709127
File Format	PDF
ISSN	00189383
Volume Number	42
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon PIN photodiodes Optical sensors Substrates Optical receivers Bipolar integrated circuits Photonic integrated circuits High speed integrated circuits High speed optical techniques Epitaxial layers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode

Si-OEIC with a built-in PIN-photodiode

High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors

Blue-Enhanced PIN Finger Photodiodes in a 0.35-$mu{hbox {m}}$ SiGe BiCMOS Technology

InP-Based High-Speed Photodetectors

High-speed interdigitated Ge PIN photodetectors

Fabrication of p-i-n photodiodes on LPE-grown substrates

A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits

A high-speed, high-sensitivity silicon lateral trench photodetector

Development of an integrated high speed silicon PIN photodiode sensor

Similar Documents

220-MHz monolithically integrated optical sensor with large-area integrated PIN photodiode

Si-OEIC with a built-in PIN-photodiode

High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors

Blue-Enhanced PIN Finger Photodiodes in a 0.35-$mu{hbox {m}}$ SiGe BiCMOS Technology

InP-Based High-Speed Photodetectors

High-speed interdigitated Ge PIN photodetectors

Fabrication of p-i-n photodiodes on LPE-grown substrates

A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuits

A high-speed, high-sensitivity silicon lateral trench photodetector

Development of an integrated high speed silicon PIN photodiode sensor