NDLI: N-shaped negative differential resistance in a transistor structure with a resistive gate

Content Provider	IEEE Xplore Digital Library
Author	Houng-Chi Wei Yeong-Her Wang Mau-Phon Houng
Copyright Year	1963
Abstract	Voltage-controlled negative differential resistance (NDR) characteristics in a N-AlGaAs/p/sup +/-GaAs/n-GaAs transistor structure are proposed and demonstrated. The gate, made using self-aligned p-type diffusion, is placed in the n-GaAs collector layer instead of the p/sup +/-GaAs base layer, resulting in a so-called resistive gate. For a fixed gate voltage, the device current is modulated by the applied anode voltage. Under appropriate gate voltage with respect to the anode, the device shows good voltage-controllable NDR characteristics, including large peak-to-valley current ratios (PTV's) and a voltage extension in the N-shaped curve which is equivalent to the common-emitter breakdown voltage in a transistor. A numerical model based on the transistor model for the carrier transport in this device, taking account of the influence of the applied anode voltage on the gate, is proposed. The experimental results show large room temperature PTV's (e.g., 140 at a gate bias of 1.5 V) and large voltage extension in N-shaped curves (about 9 V). Reasonable agreement between theoretical and experimental results is observed.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1327
Ending Page	1333
Page Count	7
File Size	699784
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Anodes Breakdown voltage Diodes Resonant tunneling devices Electrons Heterojunction bipolar transistors Voltage control Numerical models Logic devices
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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