NDLI: A new technique for depth resolved carrier recombination measurements applied to proton irradiated thyristors

Content Provider	IEEE Xplore Digital Library
Author	Linnros, J. Norlin, P. Hallen, A.
Copyright Year	1963
Abstract	A contactless technique for localized carrier recombination measurements is demonstrated and applied for depth resolved lifetime measurements of proton irradiated thyristors. The measurement principle is based on homogeneous generation of carriers by a laser pulse and the simultaneous detection of carriers using free carrier absorption of a focused infrared probe beam. The approach relies on the instantaneous detection of the build-up of carriers during a short excitation pulse for which diffusion effects become negligible. By comparing the measured number of carriers in a defect laced sample with the optical generation rate during the pulse, e.g., inferred from the number of generated carriers in a virgin Si sample, the lifetime is calculated. The resulting carrier recombination depth profiles show good agreement with Monte Carlo simulated ion damage profiles. In particular, the damage tail towards the surface is clearly resolved. This shows that defects created in the proton tracks are electrically active and need to be considered for proper device performance.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2065
Ending Page	2073
Page Count	9
File Size	963113
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical pulse generation Pulse measurements Protons Infrared detectors Lifetime estimation Thyristors Electromagnetic wave absorption Probes Laser beams Laser excitation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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