NDLI: Base recombination of high performance InGaAs/InP HBT's

Content Provider	IEEE Xplore Digital Library
Author	Seabury, C.W. Farley, C.W. McDermott, B.T. Higgins, J.A. Lin, C.L. Kirchner, P.J. Woodall, J.M. Gee, R.C.
Copyright Year	1963
Abstract	Summary form only given. The authors have measured the gain of InGaAs HBTs (heterojunction bipolar transistors) as a function of base doping, with Zn and Be, using MOCVD (metal-organic chemical vapor deposition), and with C, using gas source MBE (molecular beam epitaxy), in the range of 510/sup 18/ to 810/sup 19/. Large area devices were measured at 2 kA/cm/sup 2/, where DC gain is saturated. Single HBTs, and double HBTs with graded base-collector junctions, were compared. Zn doping gave the highest figure of merit (HFE/R/sub bs//sup 2/), but the tendency for Zn to diffuse at high concentrations produced low collector breakdown voltage. Be doping resulted in high V/sub bc/>6 V at very low r/sub o/, <1000 Omega /sq, but lower gain. Published data indicate that this is not inherent with Be but may be related to the purity of the organometallic Be source used. Carbon-doped material fell in between these limits with more scatter in the data. Double heterojunction microwave power devices were fabricated from carbon doped material, using a dual self-aligned, dielectric assisted planarization process.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2123
Ending Page	2124
Page Count	2
File Size	276888
File Format	PDF
ISSN	00189383
Volume Number	40
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Indium phosphide Doping Zinc Gain measurement Molecular beam epitaxial growth Dielectric materials Organic materials Heterojunction bipolar transistors MOCVD
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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