NDLI: Performance-driven scaling of BiCMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Raje, P.A. Saraswat, K.C. Cham, K.M.
Copyright Year	1963
Abstract	A BiCMOS scaling analysis is carried out to optimize the performance of digital BiCMOS gates while accounting for the conditions that make the direct application of conventional BJT and MOS scaling rules invalid. A simple set of technological parameters that directly affect BJT and MOS device characteristics in the context of BiCMOS is identified. Scaling of the technological parameters leads to scaling of the device parameters which in turn appear in a comprehensive, accurate delay model. The scaling of logic gate delay under various possible scenarios is investigated and a set of optimal scaling rules is proposed that simultaneously scales all components of gate delay. The optimal rules require a linear reduction in horizontal and vertical dimensions, a linear increase in collector doping, and a square root reduction in supply voltage. When 1 mu m, 5 V, 8 GHz technology is scaled to 0.5 mu m, 3.5 V, 18 GHz according to the optimal scaling rules, a 2* improvement in BiCMOS performance is obtained. Despite the supply voltage reduction BiCMOS maintains a performance advantage of 1.5* over CMOS.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	685
Ending Page	694
Page Count	10
File Size	1017661
File Format	PDF
ISSN	00189383
Volume Number	39
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1992-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	BiCMOS integrated circuits Delay Voltage Performance analysis MOS devices Semiconductor process modeling Logic gates Logic devices Doping CMOS technology
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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