NDLI: Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation

Content Provider	IEEE Xplore Digital Library
Author	Dodd, P.E. Stellwag, T.B. Melloch, M.R. Lundstrom, M.S.
Copyright Year	1963
Abstract	Surface and perimeter recombination in GaAs heteroface diodes was studied experimentally and by two-dimensional numerical simulation including Fermi-level pinning. Perimeter and bulk current components were experimentally extracted, and the numerical model was used to study the origin of perimeter current in these devices. Under moderate bias, perimeter recombination occurs primarily within the junction depletion region, but as the bias is increased the perimeter outside of the junction depletion region becomes increasingly important. A bias dependence of the perimeter current ideality factor was observed both experimentally and theoretically and attributed to the perimeter recombination of injected carriers diffusing to the perimeter from the bulk regions. Fermi-level pinning was shown to increase the effective surface-recombination velocity, but conduction along the surface channel plays little role in these devices. The results demonstrate that a simple numerical treatment of Fermi-level pinning and surface recombination can accurately account for surface and perimeter recombination in GaAs homojunction diodes.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1253
Ending Page	1261
Page Count	9
File Size	942295
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Diodes Surface treatment Spontaneous emission Numerical models Degradation Dark current Numerical simulation Photoconductivity Bipolar transistors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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