NDLI: Effects of low temperatures and intensities on GaAs and GaAs/Ge solar cells

Content Provider	IEEE Xplore Digital Library
Author	Campesato, R. Flores, C.
Copyright Year	1963
Abstract	GaAs and GaAs/Ge solar cells grown by metalorganic chemical vapor deposition (MOCVD) were characterized at very low temperature (-185 degrees C) and solar intensity (0.25 suns) to simulate the cell behavior in a severe interplanetary environment. A comparison is also made with GaAs cells grown with the liquid-phase-epitaxy (LPE) technique. The analysis carried out from -185 to +50 degrees C shows, in particular, different behaviors for GaAs/Ge cells with active and passive Ge substrates; the GaAs/Ge passive cell behaves as a GaAs on GaAs cell, indicating that from the thermal and optical point of view, Ge acts only as a mechanical support. The GaAs cell with an active Ga substrate is affected by a notch in the I-V curves, which is more evident at low temperatures but reduces at low intensities. The GaAs/GaAs MOCVD cell shows the best performance at low temperature and intensity with a conversion efficiency of 27.2%.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1233
Ending Page	1237
Page Count	5
File Size	474232
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Photovoltaic cells MOCVD Space technology Germanium Substrates Temperature distribution Sun Temperature dependence Nuclear power generation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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