NDLI: A model for charge transfer in buried-channel charge-coupled devices at low temperature

Content Provider	IEEE Xplore Digital Library
Author	Banghart, E.K. Lavine, J.P. Trabka, E.A. Nelson, E.T. Burkey, B.C.
Copyright Year	1963
Abstract	Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall generation-recombination theory. Incorporated in the model are the three-dimensional Poole-Frenkel barrier lowering theory of A. K. Jonscher (1967) and J. L. Hartke (1968) and the low-temperature form of Poisson's equation. Reasonable agreement of the model with experimental data taken from the buried-channel CCDs of a PtSi Schottky barrier infrared image sensor is found. Moreover, the value for the capture cross section of electrons to the shallow phosphorus level in silicon inferred from the model follows the cascade theory for capture by M. Lax (1959) and agrees roughly with determinations made by other experimenters.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1162
Ending Page	1174
Page Count	13
File Size	1233447
File Format	PDF
ISSN	00189383
Volume Number	38
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge transfer Charge coupled devices Electron emission Silicon Temperature sensors Schottky barriers Infrared imaging Numerical models Poisson equations Infrared detectors
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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