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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mizoguchi, T. Takayanagi, I. Shimizu, E. Nakajima, H. Hashimoto, S. Yokoyama, S. Nakamura, J. Imai, M. |
| Copyright Year | 1963 |
| Abstract | A solid-state imaging device which uses a static induction transistor (SIT) is examined. The image sensor consists of 530(H)*490(V) pixels and is suitable for a 2/3-in optical format. An analysis of its operation predicts that the performance of the image sensor can be examined in detail using an equivalent circuit. A noise equivalent irradiance of 1.5*10/sup -4/ mu W/cm/sup 2/, when using light-emitting diodes ( lambda =660 nm) as a light source, was obtained in a frame integration mode. This is comparable to that of a high-sensitivity silicon intensifier target tube, although a large image lag of 80% during the third frame is also present. High sensitivity, is achieved because the gate reset levels of the SIT depend on the exposure and the change of the gate reset levels added to the output signal. It is predicted that the image sensor will be highly sensitive but that it will have a large image lag.< |
| Sponsorship | IEEE Electron Devices Society |
| Starting Page | 1021 |
| Ending Page | 1027 |
| Page Count | 7 |
| File Size | 760120 |
| File Format | |
| ISSN | 00189383 |
| Volume Number | 38 |
| Issue Number | 5 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-05-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Image sensors Optical noise Solid state circuits Optical imaging Pixel Optical sensors Image analysis Performance analysis Equivalent circuits Circuit noise |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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