NDLI: Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulation

Content Provider	IEEE Xplore Digital Library
Author	DeMoulin, P.D. Lundstrom, M.S.
Copyright Year	1963
Abstract	The development of a comprehensive, two-dimensional numerical model for AlGaAs/GaAs solar cells is described. The model was used to identify loss mechanisms in present-day high-efficiency GaAs cells and to make realistic projections of attainable cell efficiencies. Numerical simulations show that achievable efficiencies of conventional heteroface cells made on high-quality GaAs films exceed 30% under 500 suns (AM1.5 direct spectrum). Both p-n and n-p cells are adversely affected by bandgap narrowing in p/sup +/ GaAs. For n-p cells, the use of heterojunction back-surface fields is advantageous and results in an increase of about 1.5% in efficiency. When the Shockley-Read-Hall lifetime parameters are set to infinity, the efficiency increases by only another 0.7%, which demonstrates that bulk material quality is not the major limiting factor in present-day cells. These efficiency projections, which are based on detailed device simulation and realistic material parameters, are only a few percentage points below the thermodynamic limit for GaAs cells.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	897
Ending Page	905
Page Count	9
File Size	979137
File Format	PDF
ISSN	00189383
Volume Number	36
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Numerical simulation Numerical models Photovoltaic cells Photonic band gap Silicon Semiconductor process modeling Equations Sun Heterojunctions
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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