NDLI: Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures

Content Provider	IEEE Xplore Digital Library
Author	Katoh, R. Kurata, M. Yoshida, J.
Copyright Year	1963
Abstract	A one-dimensional self-consistent particle simulation was developed for (AlGa)As/GaAs heterojunction bipolar transistors (HBTs) to investigate how far device performance can be improved by positively utilizing nonequilibrium electron transport phenomena. Hole plasmon scattering and the screening effect on LO phonon scattering were proved to play an essential role in determining the minority-carrier temperature in a heavily doped base layer. The computation was carried out for HBTs with various types of base and collector structures. The electron transport mechanisms are discussed in detail in connection with the reduction in base-to-collector transit time. Intrinsic device performance is expected to improve with the cutoff frequency exceeding 150 GHz, as a result of adopting a graded-gap base and a p-type collector structure, even under a heavily doped base condition.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	846
Ending Page	853
Page Count	8
File Size	774094
File Format	PDF
ISSN	00189383
Volume Number	36
Issue Number	5
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-05-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Electrons Particle scattering Cutoff frequency Semiconductor process modeling Plasmons Phonons Temperature Monte Carlo methods
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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A self-consistent particle simulation for (AlGa) As/GaAs HBTs with improved base-collector structures

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