NDLI: Measurement of the local latch-up sensitivity by means of computer-controller scanning electron microscopy

Content Provider	IEEE Xplore Digital Library
Author	Canali, C. Giannini, M. Scorzoni, A. Vanzi, M. Zanoni, E.
Copyright Year	1966
Abstract	The scanning electron microscopy (SEM) technique for the study of the local sensitivity to latch-up of CMOS integrated circuits is discussed. The technique is independent of a particular electric firing mechanism of latchup and does not require in-depth electrical characterization of the IC before the analysis. The electron beam in the SEM is adopted as a localized current injector, and the injected carriers are used to induce the latch-up state rather than to visualize its paths. A minicomputer-based system drives the beam position and automatically blanks the beam if the scan path has to cross areas which should be protected from charge injection. An example of application is described.<>
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	597
Ending Page	603
Page Count	7
File Size	1218303
File Format	PDF
ISSN	00189200
Volume Number	23
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-04-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scanning electron microscopy Integrated circuit measurements CMOS integrated circuits Electron beams Visualization Protection
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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