NDLI: An electrothermal model of memory switching in vertical polycrystalline silicon structures

Content Provider	IEEE Xplore Digital Library
Author	Malhotra, V. Mahan, J.E. Ellsworth, D.L.
Copyright Year	1963
Abstract	The theoretical preswitching temperature, resistivity, and current-density distributions within the thin-film device were obtained from the solution of the transient two-dimensional heat equation. The results of the computer simulation, obtained for the case where conductivity is dependent on both temperature and electric field, show that current crowding occurs at the center of the device and that thermal runaway develops in a few tens of nanoseconds for voltages above a critical value. A simulated conductive irregularity forces the filament to nucleate away from the center and closer to or at the inhomogeneity. The excellent agreement between the experimental data and the simulation lends support to the idea that the fundamental switching mechanism is thermal in nature.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1514
Ending Page	1523
Page Count	10
File Size	1033802
File Format	PDF
ISSN	00189383
Volume Number	35
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrothermal effects Thermal conductivity Temperature distribution Thin film devices Equations Computer simulation Temperature dependence Proximity effect Nanoscale devices Voltage
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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