NDLI: Laser-induced diode linking for wafer-scale integration

Content Provider	IEEE Xplore Digital Library
Author	Cohen, S.S. Wyatt, P.W. Chapman, G.H. Canter, J.M.
Copyright Year	1963
Abstract	Diodes formed by ion implantation and diffusion in a conventional CMOS process are positioned such that when desired they may be used to obtain an electrical link between two otherwise separate sections of the integrated circuit. Electrical connections so obtained enable the realization of wafer-scale ICs as demonstrated in recent applications. They theory of laser-beam application to silicon is discussed and it is shown how the various beam and substrate parameters effect the properties of the diode links. Particular attention is paid to the important issue of the reflectivity from the composite system. Careful analytical examinations of the resulting molten zone properties have been performed to fully qualify the use of laser radiation in this technology. Both scanning electron microscopy and secondary-ion mass spectrometry were used to examine such parameters as the lateral and in-depth extension of the molten zone. In addition, electrical measurements were carried out. The results for the various observables compare well with the theoretical predictions.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1533
Ending Page	1550
Page Count	18
File Size	2410857
File Format	PDF
ISSN	00189383
Volume Number	35
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diodes Joining processes Wafer scale integration Laser theory Ion implantation CMOS process CMOS integrated circuits Laser applications Silicon Laser beams
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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